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| Datasheet File OCR Text: |
| CORPORATION N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 FEATURES * Low ON Resistance * Low Capacitance Gain * High Gate Breakdown Voltage * High * Low Threshold Voltage PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . 125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-72 ORDERING INFORMATION Part D C G S Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC 2N4351 X2N4351 1003 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL BVDSS IGSS IDSS VGS(th) ID(on) VDS(on) rDS(on) | yfs | Crss Ciss Cd(sub) td(on) tr td(off) tf PARAMETER Drain-Source Breakdown Voltage Gate Leakage Current Zero-Gate-Voltage Drain Current Gate-Source Threshold Voltage "ON" Drain Current Drain-Source "ON" Voltage Drain-Source Resistance Forward Transfer Admittance Reverse Transfer Capacitance (Note 2) Input Capacitance (Note 2) Drain-Substrate Capacitance (Note 2) Turn-On Delay (Note 2) Rise Time (Note 2) Turn-Off Delay (Note 2) Fall Time (Note 2) 1000 1.3 5.0 5.0 45 65 60 100 ns pF 1 3 1 300 MIN 25 10 10 5 MAX UNITS V pA nA V mA V ohms S TEST CONDITIONS ID = 10A, VGS = 0 VGS = 30V, VDS = 0 VDS = 10V, VGS = 0 VDS = 10V, ID = 10A VGS = 10V, VDS = 10V ID = 2mA, VGS = 10V VGS = 10V, ID = 0, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 0, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VD(SUB) = 10V, f = 1MHz NOTES: 1. Device must not be tested at 125V more than once or longer than 300ms. 2. For design reference only, not 100% tested. |
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